FLASHEx Exported Functions

Modules
	Extended IO operation functions
	Extended IO operation functions.
Functions
void	FLASH_Erase_Sector (uint32_t Sector, uint8_t VoltageRange)
	Erase the specified FLASH memory sector.
void	FLASH_FlushCaches (void)
	Flush the instruction and data caches.
static void	FLASH_MassErase (uint8_t VoltageRange, uint32_t Banks)
	Full erase of FLASH memory sectors.
static HAL_StatusTypeDef	FLASH_OB_EnableWRP (uint32_t WRPSector, uint32_t Banks)
	Enable the write protection of the desired bank1 or bank 2 sectors.
static HAL_StatusTypeDef	FLASH_OB_DisableWRP (uint32_t WRPSector, uint32_t Banks)
	Disable the write protection of the desired bank1 or bank 2 sectors.
static HAL_StatusTypeDef	FLASH_OB_BootConfig (uint8_t BootConfig)
	Configure the Dual Bank Boot.
static HAL_StatusTypeDef	FLASH_OB_EnablePCROP (uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks)
	Enable the read/write protection (PCROP) of the desired sectors of Bank 1 and/or Bank 2.
static HAL_StatusTypeDef	FLASH_OB_DisablePCROP (uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks)
	Disable the read/write protection (PCROP) of the desired sectors of Bank 1 and/or Bank 2.
static HAL_StatusTypeDef	FLASH_OB_RDP_LevelConfig (uint8_t Level)
	Set the read protection level.
static HAL_StatusTypeDef	FLASH_OB_UserConfig (uint8_t Iwdg, uint8_t Stop, uint8_t Stdby)
	Program the FLASH User Option Byte: IWDG_SW / RST_STOP / RST_STDBY.
static HAL_StatusTypeDef	FLASH_OB_BOR_LevelConfig (uint8_t Level)
	Set the BOR Level.
static uint8_t	FLASH_OB_GetUser (void)
	Return the FLASH User Option Byte value.
static uint16_t	FLASH_OB_GetWRP (void)
	Return the FLASH Write Protection Option Bytes value.
static uint8_t	FLASH_OB_GetRDP (void)
	Returns the FLASH Read Protection level.
static uint8_t	FLASH_OB_GetBOR (void)
	Returns the FLASH BOR level.

---

Function Documentation

void FLASH_Erase_Sector	(	uint32_t	Sector,
		uint8_t	VoltageRange
	)

Erase the specified FLASH memory sector.

Parameters:

Sector

FLASH sector to erase The value of this parameter depend on device used within the same series

VoltageRange

The device voltage range which defines the erase parallelism. This parameter can be one of the following values: FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V, the operation will be done by byte (8-bit) FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V, the operation will be done by half word (16-bit) FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V, the operation will be done by word (32-bit) FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp, the operation will be done by double word (64-bit)

Return values:

None

Definition at line 586 of file stm32f4xx_hal_flash_ex.c.

References assert_param, FLASH_PSIZE_BYTE, FLASH_PSIZE_DOUBLE_WORD, FLASH_PSIZE_HALF_WORD, FLASH_PSIZE_WORD, FLASH_SECTOR_11, FLASH_VOLTAGE_RANGE_1, FLASH_VOLTAGE_RANGE_2, FLASH_VOLTAGE_RANGE_3, IS_FLASH_SECTOR, and IS_VOLTAGERANGE.

Referenced by HAL_FLASH_IRQHandler(), HAL_FLASHEx_Erase(), and HAL_FLASHEx_Erase_IT().

void FLASH_FlushCaches

(

void

)

Flush the instruction and data caches.

Return values:

None

Definition at line 1311 of file stm32f4xx_hal_flash_ex.c.

References __HAL_FLASH_DATA_CACHE_DISABLE, __HAL_FLASH_DATA_CACHE_ENABLE, __HAL_FLASH_DATA_CACHE_RESET, __HAL_FLASH_INSTRUCTION_CACHE_DISABLE, __HAL_FLASH_INSTRUCTION_CACHE_ENABLE, and __HAL_FLASH_INSTRUCTION_CACHE_RESET.

Referenced by HAL_FLASH_IRQHandler(), and HAL_FLASHEx_Erase().

static void FLASH_MassErase	(	uint8_t	VoltageRange,
		uint32_t	Banks
	)		[static]

Full erase of FLASH memory sectors.

Parameters:

VoltageRange

The device voltage range which defines the erase parallelism. This parameter can be one of the following values: FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V, the operation will be done by byte (8-bit) FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V, the operation will be done by half word (16-bit) FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V, the operation will be done by word (32-bit) FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp, the operation will be done by double word (64-bit)

Banks

Banks to be erased This parameter can be one of the following values: FLASH_BANK_1: Bank1 to be erased FLASH_BANK_2: Bank2 to be erased FLASH_BANK_BOTH: Bank1 and Bank2 to be erased

Return values:

HAL

Status

Definition at line 542 of file stm32f4xx_hal_flash_ex.c.

References assert_param, FLASH_BANK_1, FLASH_BANK_BOTH, FLASH_MER_BIT, IS_FLASH_BANK, and IS_VOLTAGERANGE.

Referenced by HAL_FLASHEx_Erase(), and HAL_FLASHEx_Erase_IT().

static HAL_StatusTypeDef FLASH_OB_BootConfig

(

uint8_t

BootConfig

)

[static]

Configure the Dual Bank Boot.

Note:

This function can be used only for STM32F42xxx/43xxx devices.

Parameters:

BootConfig

specifies the Dual Bank Boot Option byte. This parameter can be one of the following values: OB_Dual_BootEnabled: Dual Bank Boot Enable OB_Dual_BootDisabled: Dual Bank Boot Disabled

Return values:

None

Definition at line 778 of file stm32f4xx_hal_flash_ex.c.

References assert_param, FLASH_TIMEOUT_VALUE, FLASH_WaitForLastOperation(), IS_OB_BOOT, and OPTCR_BYTE0_ADDRESS.

Referenced by HAL_FLASHEx_AdvOBProgram().

static HAL_StatusTypeDef FLASH_OB_BOR_LevelConfig

(

uint8_t

Level

)

[static]

Set the BOR Level.

Parameters:

Level

specifies the Option Bytes BOR Reset Level. This parameter can be one of the following values: OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V OB_BOR_OFF: Supply voltage ranges from 1.62 to 2.1 V

Return values:

HAL

Status

Definition at line 1231 of file stm32f4xx_hal_flash_ex.c.

References assert_param, IS_OB_BOR_LEVEL, and OPTCR_BYTE0_ADDRESS.

Referenced by HAL_FLASHEx_OBProgram().

static HAL_StatusTypeDef FLASH_OB_DisablePCROP	(	uint32_t	SectorBank1,
		uint32_t	SectorBank2,
		uint32_t	Banks
	)		[static]

Disable the read/write protection (PCROP) of the desired sectors of Bank 1 and/or Bank 2.

Note:

This function can be used only for STM32F42xxx/43xxx devices.

Parameters:

SectorBank1	specifies the sector(s) to be read/write protected or unprotected for bank1. This parameter can be one of the following values: OB_PCROP: A value between OB_PCROP_SECTOR_0 and OB_PCROP_SECTOR_11 OB_PCROP_SECTOR__All
SectorBank2	Specifies the sector(s) to be read/write protected or unprotected for bank2. This parameter can be one of the following values: OB_PCROP: A value between OB_PCROP_SECTOR_12 and OB_PCROP_SECTOR_23 OB_PCROP_SECTOR__All
Banks	Disable PCROP protection on all the sectors for the specific bank This parameter can be one of the following values: FLASH_BANK_1: WRP on all sectors of bank1 FLASH_BANK_2: WRP on all sectors of bank2 FLASH_BANK_BOTH: WRP on all sectors of bank1 & bank2

Return values:

HAL

Status

Definition at line 882 of file stm32f4xx_hal_flash_ex.c.

References assert_param, FLASH_BANK_1, FLASH_BANK_BOTH, FLASH_TIMEOUT_VALUE, FLASH_WaitForLastOperation(), IS_FLASH_BANK, IS_OB_PCROP, OPTCR1_BYTE2_ADDRESS, and OPTCR_BYTE2_ADDRESS.

Referenced by HAL_FLASHEx_AdvOBProgram().

static HAL_StatusTypeDef FLASH_OB_DisableWRP	(	uint32_t	WRPSector,
		uint32_t	Banks
	)		[static]

Disable the write protection of the desired bank1 or bank 2 sectors.

Note:

When the memory read protection level is selected (RDP level = 1), it is not possible to program or erase the flash sector i if CortexM4 debug features are connected or boot code is executed in RAM, even if nWRPi = 1

Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1).

Parameters:

WRPSector

specifies the sector(s) to be write protected. This parameter can be one of the following values: WRPSector: A value between OB_WRP_SECTOR_0 and OB_WRP_SECTOR_23 OB_WRP_Sector_All

Note:

BANK2 starts from OB_WRP_SECTOR_12

Parameters:

Banks

Disable write protection on all the sectors for the specific bank This parameter can be one of the following values: FLASH_BANK_1: Bank1 to be erased FLASH_BANK_2: Bank2 to be erased FLASH_BANK_BOTH: Bank1 and Bank2 to be erased

Return values:

HAL

Status

Definition at line 717 of file stm32f4xx_hal_flash_ex.c.

References assert_param, FLASH_BANK_1, FLASH_BANK_BOTH, FLASH_TIMEOUT_VALUE, FLASH_WaitForLastOperation(), IS_FLASH_BANK, IS_OB_WRP_SECTOR, OB_WRP_SECTOR_12, OB_WRP_SECTOR_All, OPTCR1_BYTE2_ADDRESS, and OPTCR_BYTE2_ADDRESS.

Referenced by HAL_FLASHEx_OBProgram().

static HAL_StatusTypeDef FLASH_OB_EnablePCROP	(	uint32_t	SectorBank1,
		uint32_t	SectorBank2,
		uint32_t	Banks
	)		[static]

Enable the read/write protection (PCROP) of the desired sectors of Bank 1 and/or Bank 2.

Note:

This function can be used only for STM32F42xxx/43xxx devices.

Parameters:

SectorBank1	Specifies the sector(s) to be read/write protected or unprotected for bank1. This parameter can be one of the following values: OB_PCROP: A value between OB_PCROP_SECTOR_0 and OB_PCROP_SECTOR_11 OB_PCROP_SECTOR__All
SectorBank2	Specifies the sector(s) to be read/write protected or unprotected for bank2. This parameter can be one of the following values: OB_PCROP: A value between OB_PCROP_SECTOR_12 and OB_PCROP_SECTOR_23 OB_PCROP_SECTOR__All
Banks	Enable PCROP protection on all the sectors for the specific bank This parameter can be one of the following values: FLASH_BANK_1: WRP on all sectors of bank1 FLASH_BANK_2: WRP on all sectors of bank2 FLASH_BANK_BOTH: WRP on all sectors of bank1 & bank2

Return values:

HAL

Status

Definition at line 818 of file stm32f4xx_hal_flash_ex.c.

References assert_param, FLASH_BANK_1, FLASH_BANK_BOTH, FLASH_TIMEOUT_VALUE, FLASH_WaitForLastOperation(), IS_FLASH_BANK, IS_OB_PCROP, OPTCR1_BYTE2_ADDRESS, and OPTCR_BYTE2_ADDRESS.

Referenced by HAL_FLASHEx_AdvOBProgram().

static HAL_StatusTypeDef FLASH_OB_EnableWRP	(	uint32_t	WRPSector,
		uint32_t	Banks
	)		[static]

Enable the write protection of the desired bank1 or bank 2 sectors.

Note:

When the memory read protection level is selected (RDP level = 1), it is not possible to program or erase the flash sector i if CortexM4 debug features are connected or boot code is executed in RAM, even if nWRPi = 1

Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1).

Parameters:

WRPSector

specifies the sector(s) to be write protected. This parameter can be one of the following values: WRPSector: A value between OB_WRP_SECTOR_0 and OB_WRP_SECTOR_23 OB_WRP_SECTOR_All

Note:

BANK2 starts from OB_WRP_SECTOR_12

Parameters:

Banks

Enable write protection on all the sectors for the specific bank This parameter can be one of the following values: FLASH_BANK_1: WRP on all sectors of bank1 FLASH_BANK_2: WRP on all sectors of bank2 FLASH_BANK_BOTH: WRP on all sectors of bank1 & bank2

Return values:

HAL	FLASH State

Definition at line 646 of file stm32f4xx_hal_flash_ex.c.

References assert_param, FLASH_BANK_1, FLASH_BANK_BOTH, FLASH_TIMEOUT_VALUE, FLASH_WaitForLastOperation(), IS_FLASH_BANK, IS_OB_WRP_SECTOR, OB_WRP_SECTOR_12, OB_WRP_SECTOR_All, OPTCR1_BYTE2_ADDRESS, and OPTCR_BYTE2_ADDRESS.

Referenced by HAL_FLASHEx_OBProgram().

static uint8_t FLASH_OB_GetBOR

(

void

)

[static]

Returns the FLASH BOR level.

Return values:

uint8_t

The FLASH BOR level: OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V OB_BOR_OFF : Supply voltage ranges from 1.62 to 2.1 V

Definition at line 1301 of file stm32f4xx_hal_flash_ex.c.

References OPTCR_BYTE0_ADDRESS.

Referenced by HAL_FLASHEx_OBGetConfig().

static uint8_t FLASH_OB_GetRDP

(

void

)

[static]

Returns the FLASH Read Protection level.

Return values:

FLASH

ReadOut Protection Status: This parameter can be one of the following values: OB_RDP_LEVEL_0: No protection OB_RDP_LEVEL_1: Read protection of the memory OB_RDP_LEVEL_2: Full chip protection

Definition at line 1273 of file stm32f4xx_hal_flash_ex.c.

References OB_RDP_LEVEL_0, OB_RDP_LEVEL_1, OB_RDP_LEVEL_2, and OPTCR_BYTE1_ADDRESS.

Referenced by HAL_FLASHEx_OBGetConfig().

static uint8_t FLASH_OB_GetUser

(

void

)

[static]

Return the FLASH User Option Byte value.

Return values:

uint8_t

FLASH User Option Bytes values: IWDG_SW(Bit0), RST_STOP(Bit1) and RST_STDBY(Bit2).

Definition at line 1249 of file stm32f4xx_hal_flash_ex.c.

Referenced by HAL_FLASHEx_OBGetConfig().

static uint16_t FLASH_OB_GetWRP

(

void

)

[static]

Return the FLASH Write Protection Option Bytes value.

Return values:

uint16_t

FLASH Write Protection Option Bytes value

Definition at line 1259 of file stm32f4xx_hal_flash_ex.c.

References OPTCR_BYTE2_ADDRESS.

Referenced by HAL_FLASHEx_OBGetConfig().

static HAL_StatusTypeDef FLASH_OB_RDP_LevelConfig

(

uint8_t

Level

)

[static]

Set the read protection level.

Parameters:

Level

specifies the read protection level. This parameter can be one of the following values: OB_RDP_LEVEL_0: No protection OB_RDP_LEVEL_1: Read protection of the memory OB_RDP_LEVEL_2: Full chip protection

Note:

WARNING: When enabling OB_RDP level 2 it's no more possible to go back to level 1 or 0

Return values:

HAL

Status

Definition at line 1162 of file stm32f4xx_hal_flash_ex.c.

References assert_param, FLASH_TIMEOUT_VALUE, FLASH_WaitForLastOperation(), IS_OB_RDP_LEVEL, and OPTCR_BYTE1_ADDRESS.

Referenced by HAL_FLASHEx_OBProgram().

static HAL_StatusTypeDef FLASH_OB_UserConfig	(	uint8_t	Iwdg,
		uint8_t	Stop,
		uint8_t	Stdby
	)		[static]

Program the FLASH User Option Byte: IWDG_SW / RST_STOP / RST_STDBY.

Parameters:

Iwdg	Selects the IWDG mode This parameter can be one of the following values: OB_IWDG_SW: Software IWDG selected OB_IWDG_HW: Hardware IWDG selected
Stop	Reset event when entering STOP mode. This parameter can be one of the following values: OB_STOP_NO_RST: No reset generated when entering in STOP OB_STOP_RST: Reset generated when entering in STOP
Stdby	Reset event when entering Standby mode. This parameter can be one of the following values: OB_STDBY_NO_RST: No reset generated when entering in STANDBY OB_STDBY_RST: Reset generated when entering in STANDBY

Return values:

HAL

Status

Definition at line 1196 of file stm32f4xx_hal_flash_ex.c.

References assert_param, FLASH_TIMEOUT_VALUE, FLASH_WaitForLastOperation(), IS_OB_IWDG_SOURCE, IS_OB_STDBY_SOURCE, IS_OB_STOP_SOURCE, and OPTCR_BYTE0_ADDRESS.

Referenced by HAL_FLASHEx_OBProgram().