Functions
static void	FLASH_MassErase (uint32_t Banks)
	Mass erase of FLASH memory.
static HAL_StatusTypeDef	FLASH_OB_WRPConfig (uint32_t WRPArea, uint32_t WRPStartOffset, uint32_t WRDPEndOffset)
	Configure the write protection of the desired pages.
static HAL_StatusTypeDef	FLASH_OB_RDPConfig (uint32_t RDPLevel)
	Set the read protection level.
static HAL_StatusTypeDef	FLASH_OB_UserConfig (uint32_t UserType, uint32_t UserConfig)
	Program the FLASH User Option Byte.
static HAL_StatusTypeDef	FLASH_OB_PCROPConfig (uint32_t PCROPConfig, uint32_t PCROPStartAddr, uint32_t PCROPEndAddr)
	Configure the Proprietary code readout protection of the desired addresses.
static void	FLASH_OB_GetWRP (uint32_t WRPArea, uint32_t WRPStartOffset, uint32_t WRDPEndOffset)
	Return the FLASH Write Protection Option Bytes value.
static uint32_t	FLASH_OB_GetRDP (void)
	Return the FLASH Read Protection level.
static uint32_t	FLASH_OB_GetUser (void)
	Return the FLASH User Option Byte value.
static void	FLASH_OB_GetPCROP (uint32_t PCROPConfig, uint32_t PCROPStartAddr, uint32_t *PCROPEndAddr)
	Return the FLASH Write Protection Option Bytes value.
void	FLASH_PageErase (uint32_t Page, uint32_t Banks)
	Erase the specified FLASH memory page.
void	FLASH_FlushCaches (void)
	Flush the instruction and data caches.

Function Documentation

void FLASH_FlushCaches ( void )

Flush the instruction and data caches.

Return values:

None

Definition at line 594 of file stm32l4xx_hal_flash_ex.c.

References __HAL_FLASH_DATA_CACHE_ENABLE, __HAL_FLASH_DATA_CACHE_RESET, __HAL_FLASH_INSTRUCTION_CACHE_DISABLE, __HAL_FLASH_INSTRUCTION_CACHE_ENABLE, __HAL_FLASH_INSTRUCTION_CACHE_RESET, FLASH_ProcessTypeDef::CacheToReactivate, FLASH_CACHE_DCACHE_ENABLED, FLASH_CACHE_DISABLED, FLASH_CACHE_ICACHE_DCACHE_ENABLED, FLASH_CACHE_ICACHE_ENABLED, and pFlash.

Referenced by HAL_FLASH_IRQHandler(), HAL_FLASH_Program(), and HAL_FLASHEx_Erase().

static void FLASH_MassErase ( uint32_t Banks ) [static]

Mass erase of FLASH memory.

Parameters:

Banks

Banks to be erased This parameter can be one of the following values:

FLASH_BANK_1: Bank1 to be erased
FLASH_BANK_2: Bank2 to be erased
FLASH_BANK_BOTH: Bank1 and Bank2 to be erased

Return values:

None

Definition at line 504 of file stm32l4xx_hal_flash_ex.c.

References assert_param, FLASH_BANK_1, and IS_FLASH_BANK.

Referenced by HAL_FLASHEx_Erase(), and HAL_FLASHEx_Erase_IT().

static void FLASH_OB_GetPCROP	(	uint32_t *	PCROPConfig,
		uint32_t *	PCROPStartAddr,
		uint32_t *	PCROPEndAddr
	)		`[static]`

Return the FLASH Write Protection Option Bytes value.

Parameters:

PCROPConfig	[inout]: specifies the configuration (Bank to be configured and PCROP_RDP option). This parameter must be a combination of FLASH_BANK_1 or FLASH_BANK_2 with OB_PCROP_RDP_NOT_ERASE or OB_PCROP_RDP_ERASE
PCROPStartAddr	[out]: specifies the address where to copied the start address of the Proprietary code readout protection
PCROPEndAddr	[out]: specifies the address where to copied the end address of the Proprietary code readout protection

Return values:

None

Definition at line 1213 of file stm32l4xx_hal_flash_ex.c.

References FLASH_BANK_1, FLASH_BANK_BOTH, and FLASH_BANK_SIZE.

Referenced by HAL_FLASHEx_OBGetConfig().

static uint32_t FLASH_OB_GetRDP ( void ) [static]

Return the FLASH Read Protection level.

Return values:

FLASH

ReadOut Protection Status: This return value can be one of the following values:

OB_RDP_LEVEL_0: No protection
OB_RDP_LEVEL_1: Read protection of the memory
OB_RDP_LEVEL_2: Full chip protection

Definition at line 1164 of file stm32l4xx_hal_flash_ex.c.

References OB_RDP_LEVEL_0, OB_RDP_LEVEL_1, and OB_RDP_LEVEL_2.

Referenced by HAL_FLASHEx_OBGetConfig().

static uint32_t FLASH_OB_GetUser ( void ) [static]

Return the FLASH User Option Byte value.

Return values:

The FLASH User Option Bytes values: For STM32L47x/STM32L48x devices : BOR_LEV(Bit8-10), nRST_STOP(Bit12), nRST_STDBY(Bit13), nRST_SHDW(Bit14), IWDG_SW(Bit16), IWDG_STOP(Bit17), IWDG_STDBY(Bit18), WWDG_SW(Bit19), BFB2(Bit20), DUALBANK(Bit21), nBOOT1(Bit23), SRAM2_PE(Bit24) and SRAM2_RST(Bit25). For STM32L43x/STM32L44x devices : BOR_LEV(Bit8-10), nRST_STOP(Bit12), nRST_STDBY(Bit13), nRST_SHDW(Bit14), IWDG_SW(Bit16), IWDG_STOP(Bit17), IWDG_STDBY(Bit18), WWDG_SW(Bit19), nBOOT1(Bit23), SRAM2_PE(Bit24), SRAM2_RST(Bit25), nSWBOOT0(Bit26) and nBOOT0(Bit27).

Definition at line 1190 of file stm32l4xx_hal_flash_ex.c.

Referenced by HAL_FLASHEx_OBGetConfig().

static void FLASH_OB_GetWRP	(	uint32_t	WRPArea,
		uint32_t *	WRPStartOffset,
		uint32_t *	WRDPEndOffset
	)		`[static]`

Return the FLASH Write Protection Option Bytes value.

Parameters:

[in]	WRPArea,:	specifies the area to be returned. This parameter can be one of the following values: OB_WRPAREA_BANK1_AREAA: Flash Bank 1 Area A OB_WRPAREA_BANK1_AREAB: Flash Bank 1 Area B OB_WRPAREA_BANK2_AREAA: Flash Bank 2 Area A (don't apply to STM32L43x/STM32L44x devices) OB_WRPAREA_BANK2_AREAB: Flash Bank 2 Area B (don't apply to STM32L43x/STM32L44x devices)
[out]	WRPStartOffset,:	specifies the address where to copied the start page of the write protected area
[out]	WRDPEndOffset,:	specifies the address where to copied the end page of the write protected area

Return values:

None

Definition at line 1122 of file stm32l4xx_hal_flash_ex.c.

References OB_WRPAREA_BANK1_AREAA, and OB_WRPAREA_BANK1_AREAB.

Referenced by HAL_FLASHEx_OBGetConfig().

static HAL_StatusTypeDef FLASH_OB_PCROPConfig	(	uint32_t	PCROPConfig,
		uint32_t	PCROPStartAddr,
		uint32_t	PCROPEndAddr
	)		`[static]`

Configure the Proprietary code readout protection of the desired addresses.

Note:: To configure the PCROP options, the option lock bit OPTLOCK must be cleared with the call of the HAL_FLASH_OB_Unlock() function.; To validate the PCROP options, the option bytes must be reloaded through the call of the HAL_FLASH_OB_Launch() function.

Parameters:

PCROPConfig	specifies the configuration (Bank to be configured and PCROP_RDP option). This parameter must be a combination of FLASH_BANK_1 or FLASH_BANK_2 with OB_PCROP_RDP_NOT_ERASE or OB_PCROP_RDP_ERASE
PCROPStartAddr	specifies the start address of the Proprietary code readout protection This parameter can be an address between begin and end of the bank
PCROPEndAddr	specifies the end address of the Proprietary code readout protection This parameter can be an address between PCROPStartAddr and end of the bank

Return values:

HAL Status

Definition at line 991 of file stm32l4xx_hal_flash_ex.c.

References assert_param, FLASH_BANK_1, FLASH_BANK_BOTH, FLASH_BANK_SIZE, FLASH_TIMEOUT_VALUE, FLASH_WaitForLastOperation(), IS_FLASH_BANK_EXCLUSIVE, IS_FLASH_MAIN_MEM_ADDRESS, and IS_OB_PCROP_RDP.

Referenced by HAL_FLASHEx_OBProgram().

static HAL_StatusTypeDef FLASH_OB_RDPConfig ( uint32_t RDPLevel ) [static]

Set the read protection level.

Note:: To configure the RDP level, the option lock bit OPTLOCK must be cleared with the call of the HAL_FLASH_OB_Unlock() function.; To validate the RDP level, the option bytes must be reloaded through the call of the HAL_FLASH_OB_Launch() function.; !!! Warning : When enabling OB_RDP level 2 it's no more possible to go back to level 1 or 0 !!!

Parameters:

RDPLevel

specifies the read protection level. This parameter can be one of the following values:

OB_RDP_LEVEL_0: No protection
OB_RDP_LEVEL_1: Read protection of the memory
OB_RDP_LEVEL_2: Full chip protection

Return values:

HAL status

Definition at line 727 of file stm32l4xx_hal_flash_ex.c.

References assert_param, FLASH_TIMEOUT_VALUE, FLASH_WaitForLastOperation(), and IS_OB_RDP_LEVEL.

Referenced by HAL_FLASHEx_OBProgram().

static HAL_StatusTypeDef FLASH_OB_UserConfig	(	uint32_t	UserType,
		uint32_t	UserConfig
	)		`[static]`

Program the FLASH User Option Byte.

Note:: To configure the user option bytes, the option lock bit OPTLOCK must be cleared with the call of the HAL_FLASH_OB_Unlock() function.; To validate the user option bytes, the option bytes must be reloaded through the call of the HAL_FLASH_OB_Launch() function.

Parameters:

UserType	The FLASH User Option Bytes to be modified
UserConfig	The FLASH User Option Bytes values: BOR_LEV(Bit8-10), nRST_STOP(Bit12), nRST_STDBY(Bit13), IWDG_SW(Bit16), IWDG_STOP(Bit17), IWDG_STDBY(Bit18), WWDG_SW(Bit19), BFB2(Bit20), DUALBANK(Bit21), nBOOT1(Bit23), SRAM2_PE(Bit24) and SRAM2_RST(Bit25).

Return values:

HAL status

Definition at line 771 of file stm32l4xx_hal_flash_ex.c.

References assert_param, FLASH_TIMEOUT_VALUE, FLASH_WaitForLastOperation(), IS_OB_USER_BOOT0, IS_OB_USER_BOOT1, IS_OB_USER_BOR_LEVEL, IS_OB_USER_IWDG, IS_OB_USER_IWDG_STDBY, IS_OB_USER_IWDG_STOP, IS_OB_USER_SHUTDOWN, IS_OB_USER_SRAM2_PARITY, IS_OB_USER_SRAM2_RST, IS_OB_USER_STANDBY, IS_OB_USER_STOP, IS_OB_USER_SWBOOT0, IS_OB_USER_TYPE, IS_OB_USER_WWDG, OB_USER_BOR_LEV, OB_USER_IWDG_STDBY, OB_USER_IWDG_STOP, OB_USER_IWDG_SW, OB_USER_nBOOT0, OB_USER_nBOOT1, OB_USER_nRST_SHDW, OB_USER_nRST_STDBY, OB_USER_nRST_STOP, OB_USER_nSWBOOT0, OB_USER_SRAM2_PE, OB_USER_SRAM2_RST, and OB_USER_WWDG_SW.

Referenced by HAL_FLASHEx_OBProgram().

static HAL_StatusTypeDef FLASH_OB_WRPConfig	(	uint32_t	WRPArea,
		uint32_t	WRPStartOffset,
		uint32_t	WRDPEndOffset
	)		`[static]`

Configure the write protection of the desired pages.

Note:: When the memory read protection level is selected (RDP level = 1), it is not possible to program or erase Flash memory if the CPU debug features are connected (JTAG or single wire) or boot code is being executed from RAM or System flash, even if WRP is not activated.; To configure the WRP options, the option lock bit OPTLOCK must be cleared with the call of the HAL_FLASH_OB_Unlock() function.; To validate the WRP options, the option bytes must be reloaded through the call of the HAL_FLASH_OB_Launch() function.

Parameters:

WRPArea	specifies the area to be configured. This parameter can be one of the following values: OB_WRPAREA_BANK1_AREAA: Flash Bank 1 Area A OB_WRPAREA_BANK1_AREAB: Flash Bank 1 Area B OB_WRPAREA_BANK2_AREAA: Flash Bank 2 Area A (don't apply for STM32L43x/STM32L44x devices) OB_WRPAREA_BANK2_AREAB: Flash Bank 2 Area B (don't apply for STM32L43x/STM32L44x devices)
WRPStartOffset	specifies the start page of the write protected area This parameter can be page number between 0 and (max number of pages in the bank - 1)
WRDPEndOffset	specifies the end page of the write protected area This parameter can be page number between WRPStartOffset and (max number of pages in the bank - 1)

Return values:

HAL Status

Definition at line 651 of file stm32l4xx_hal_flash_ex.c.

References assert_param, FLASH_TIMEOUT_VALUE, FLASH_WaitForLastOperation(), IS_FLASH_PAGE, IS_OB_WRPAREA, OB_WRPAREA_BANK1_AREAA, and OB_WRPAREA_BANK1_AREAB.

Referenced by HAL_FLASHEx_OBProgram().

void FLASH_PageErase	(	uint32_t	Page,
		uint32_t	Banks
	)

Erase the specified FLASH memory page.

Parameters:

Page	FLASH page to erase This parameter must be a value between 0 and (max number of pages in the bank - 1)
Banks	Bank(s) where the page will be erased This parameter can be one of the following values: FLASH_BANK_1: Page in bank 1 to be erased FLASH_BANK_2: Page in bank 2 to be erased

Return values:

None

Definition at line 551 of file stm32l4xx_hal_flash_ex.c.

References assert_param, FLASH_BANK_1, IS_FLASH_BANK_EXCLUSIVE, and IS_FLASH_PAGE.

Referenced by HAL_FLASH_IRQHandler(), HAL_FLASHEx_Erase(), and HAL_FLASHEx_Erase_IT().

Functions

Function Documentation